NAND/NOR Gate

This document outlines the R113 NAND/NOR gate module, which integrates five diode gates connected to transistor inverters. It operates as a NAND gate for negative inputs and a NOR gate for ground levels. The data provided includes input load characteristics (1 mA), output drive capabilities (18 mA), propagation delay metrics based on fan-out, and specific power requirements (+10V at 0.5 mA and -15V at 23 mA).